Photoresponse properties of ultrathin Bi₂Se₃ nanosheets synthesized by hydrothermal intercalation and exfoliation routeCHEN ZANG; XIANG QI; LONG REN et al.Applied surface science. 2014, Vol 316, pp 341-347, issn 0169-4332, 7 p.Article

High pressure transport properties of the topological insulator Bi₂Se₃HAMLIN, J. J; JEFFRIES, J. R; BUTCH, N. P et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 3, issn 0953-8984, 035602.1-035602.5Article

Surface-Sensitive Two-Dimensional Magneto-Fingerprint in Mesoscopic Bi₂Se₃ ChannelsKANDALA, Abhinav; RICHARDELLA, Anthony; DUMING ZHANG et al.Nano letters (Print). 2013, Vol 13, Num 6, pp 2471-2476, issn 1530-6984, 6 p.Article

Signatures of charge inhomogeneities in the infrared spectra of topological insulators Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃DORDEVIC, S. V; WOLF, M. S; STOJILOVIC, N et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 7, issn 0953-8984, 075501.1-075501.5Article

1/f noise in conducting channels of topological insulator materialsZAHID HOSSAIN, M; RUMYANTSEV, Sergey L; TEWELDEBRHAN, Desalegne et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 144-146, issn 1862-6300, 3 p.Article

Direct Measurement of Current-Phase Relations in Superconductor/ Topological Insulator/Superconductor JunctionsSOCHNIKOV, Ilya; BESTWICK, Andrew J; WILLIAMS, James R et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3086-3092, issn 1530-6984, 7 p.Article

MECANISME DE LA CONDUCTIVITE ELECTRIQUE DES SEMICONDUCTEURS VITROCRISTALLINS A BASE DE AS₂SE₃ ET BI₂SE₃SHKOL'NIKOV EV; BESSONOVA EH YU.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 210-214; BIBL. 10 REF.Article

Josephson effect in Al/Bi₂Se₃/Al coplanar hybrid devicesGAILETTI, L; CHARPENTIER, S; LOMBARDI, F et al.Physica. C. Superconductivity. 2014, Vol 503, pp 162-165, issn 0921-4534, 4 p.Article

The Coexistence of Superconductivity and Topological Order in the Bi₂Se₃ Thin FilmsWANG, Mei-Xiao; CANHUA LIU; XU, Zhu-An et al.Science (Washington, D.C.). 2012, Vol 336, Num 6077, pp 52-55, issn 0036-8075, 4 p.Article

Topological Insulator Quantum Dot with Tunable BarriersCHO, Sungjae; KIM, Dohun; SYERS, Paul et al.Nano letters (Print). 2012, Vol 12, Num 1, pp 469-472, issn 1530-6984, 4 p.Article

Ultrathin Topological Insulator Bi₂Se₃ Nanoribbons Exfoliated by Atomic Force MicroscopySEUNG SAE HONG; KUNDHIKANJANA, Worasom; CHA, Judy J et al.Nano letters (Print). 2010, Vol 10, Num 8, pp 3118-3122, issn 1530-6984, 5 p.Article

Quintuple layer Bi₂Se₃ thin films directly grown on insulating SiO₂ using molecular beam epitaxyJEONG HEUM JEON; MISUN SONG; HOWON KIM et al.Applied surface science. 2014, Vol 316, pp 42-45, issn 0169-4332, 4 p.Article

Coherent optical phonons in a Bi₂Se₃ single crystal measured via transient anisotropic reflectivityNORIMATSU, Katsura; JIANBO HU; GOTO, Arihiro et al.Solid state communications. 2013, Vol 157, pp 58-61, issn 0038-1098, 4 p.Article

Perpendicular magnetic anisotropy with enhanced orbital moments of Fe adatoms on a topological surface of Bi₂Se₃MAO YE; KURODA, Kenta; OKUDA, Taichi et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 23, issn 0953-8984, 232201.1-232201.5Article

Superconductivity of the topological insulator Bi₂Se₃ at high pressureKONG, P. P; ZHANG, J. L; ZHU, J. L et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 36, issn 0953-8984, 362204.1-362204.5Article

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfacesTAKAGAKI, Y; JENICHEN, B; JAHN, U et al.Semiconductor science and technology. 2013, Vol 28, Num 11, issn 0268-1242, 115013.1-115013.7Article

Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric propertiesFEINAEUGLE, M; SONES, C. L; KOUKHARENKO, E et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 112, Num 4, pp 1073-1079, issn 0947-8396, 7 p.Article

Effects of Magnetic Doping on Weak Antilocalization in Narrow Bi₂Se₃ NanoribbonsCHA, Judy J; CLAASSEN, Martin; KONG, Desheng et al.Nano letters (Print). 2012, Vol 12, Num 8, pp 4355-4359, issn 1530-6984, 5 p.Article

Observation of coherent higher frequency A_1g phonons in Bi₂Se₃ using femtosecond time-resolved reflection measurementNAKAMURA, Kazutaka G; JIANBO HU; NORIMATSU, Katsura et al.Solid state communications. 2012, Vol 152, Num 10, pp 902-904, issn 0038-1098, 3 p.Article

Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metalsTAKAGAKI, Y; JAHN, U; RAMSTEINER, M et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085031.1-085031.5Article

Ion irradiation-induced modifications in the surface morphology of Ge₂₀Se₇₄Bi₆ thin filmsSHARMA, Pratibha; VASHISTHA, M; GANESAN, V et al.Journal of alloys and compounds. 2008, Vol 462, Num 1-2, pp 452-455, issn 0925-8388, 4 p.Article

High-pressure phase transitions, amorphization, and crystallization behaviors in Bi₂Se₃JINGGENG ZHAO; HAOZHE LIU; EHM, Lars et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 12, issn 0953-8984, 125602.1-125602.8Article

Nanoimprinted substrates for high-yield production of topological insulator nanoribbonsSUNGJIN WI; ELEZI, Eljon; LIU, Amy C et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 111, Num 3, pp 755-766, issn 0947-8396, 12 p.Article

Thermoelectric properties of bismuth―selenide films with controlled morphology and texture grown using pulsed laser depositionPHUOC HUU LE; LIAO, Chien-Neng; CHIH WEI LUO et al.Applied surface science. 2013, Vol 285, pp 657-663, issn 0169-4332, 7 p., bArticle

Structural and Electrical Characterization of Bi₂Se₃ Nanostructures Grown by Metal―Organic Chemical Vapor DepositionALEGRIA, L. D; SCHROER, M. D; CHATTERJEE, A et al.Nano letters (Print). 2012, Vol 12, Num 9, pp 4711-4714, issn 1530-6984, 4 p.Article